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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW33 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 14" capstan envelope with ceramic cap.
BLW33
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION class-A; linear amplifier fvision MHz 860 860 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. VCE V 25 25 IC mA 300 300 Th C 70 25 dim (1) dB -60 -60 Po sync (1) W > typ. 1,0 > 1,15 typ. Gp dB 10,0 10,5
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation up to Tmb = 25 C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max. max. max. max. VCESM VCEO VEBO max. max. max.
BLW33
50 V 30 V 4V 1,25 A 1,9 A 19,3 W 200 C
-65 to +150 C
handbook, halfpage
10
MGP442
handbook, halfpage
20
MGP443
Ptot (W) IC (A)
(1)
15
1
Th = 70 C
Tmb = 25 C
10
5
10-1
1
10
VCE (V)
102
0 0 50 Th (C) 100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 7,5 W; Tmb = 74,5 C; i.e. Th = 70 C) From mounting base to heatsink Rth j-mb Rth mb-h = = 10,1 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
handbook, full pagewidth
15
MGP444
Th = 125 C
100 C 75 C
Rth j-h (K/W)
50 C
25 C 10 150 C 175 C Tj = 200 C 0 C
100 C
125 C
5 0 5 10 15 20 Ptot (W) 25
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example Nominal class-A operation: VCE = 25 V; IC = 300 mA; Th = 70 C. Fig.4 shows: Rth j-h Tj Typical device: Rth j-h Tj max. max. typ. typ. 10,7 K/W 150 C 8,25 K/W 132 C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 4 mA open base; IC = 30 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 30 V VBE = 0; VCE = 30 V; Tj = 175 C D.C. current gain IC = 300 mA; VCE = 25 V IC = 300 mA; VCE = 25 V; Tj = 175 C Collector-emitter saturation voltage IC = 600 mA; IB = 60 mA Transition frequency at f = 500 MHz -IE = 300 mA; VCB = 25 V -IE = 600 mA; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 20 mA; VCE = 25 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cre Ccs typ. typ. Cc typ.
(2) (1)
BLW33
V(BR)CES V(BR)CEO V(BR)EBO ICES ICES hFE hFE VCEsat fT fT
> > > < < > typ. < typ. typ. typ.
50 V 30 V 4V 1,0 mA 2,5 mA 20 40 120 450 mV 3,4 GHz 3,1 GHz 6,6 pF 3,5 pF 1,2 pF
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
handbook, halfpage
50
MGP445
handbook, halfpage
25
MGP446
VCE = 25 V hFE
Cc (pF) 20
15 25 5V 10 typ
5
0 0 0.5 1 IC (A) 1.5
0 0 10 20 VCB (V) 30
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
4
MGP447
fT (GHz) 3
typ
2
1
0 0 0.5 1 -IE (A) 1.5
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 C.
August 1986
6
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION fvision (MHz) 860 860 860 Note VCE (V) 25 25 25 IC (mA) 300 300 300 Th (C) 70 70 25 dim (dB) (1) -60 -60 -60 Po sync (W) (1) > typ. typ. 1,0 1,07 1,15
BLW33
GP (dB) > 10 typ. 10,5 typ. 10,5
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
handbook, full pagewidth
L1
C1
L2
C3
L3
T.U.T.
L7
C7
L8 50
50 L5 C2 L4 C4 C5 C6 C8
C9
C10
C11
L6
C12
C13
C14
C15
+VBB
+VCC
MGP448
Fig.8 Test circuit at fvision = 860 MHz.
List of components: C1 = C3 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003) C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 8 mm and 46 mm respectively from transistor edge C4 = C5 = 4,3 pF multilayer ceramic chip capacitor (ATC 100A-4R3-C-PX-50) C7 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C9 = C12 = 1 nF chip capacitor C10 = 100 nF polyester capacitor C11 = C13 = 470 nF polyester capacitor C14 = 10 nF polyester capacitor C15 = 3,3 F/40 F solid aluminium electrolytic capacitor L1 = stripline (5,2 mm x 4,5 mm) L2 = stripline (13,2 mm x 4,5 mm) L3 = stripline (15,0 mm x 4,5 mm) L4 = micro choke 0,47 H (cat. no. 4322 057 04770) L5 = stripline (see Fig.9 printed-circuit board layout) L6 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 x 4 mm L7 = stripline (37,0 mm x 4,5 mm) L8 = stripline (13,5 mm x 4,5 mm) August 1986 7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
L1; L2; L3; L5; L7 and L8 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/16". For bias circuit see Fig.10.
handbook, full pagewidth
114.5
46
C11 C10 L4 L1 C1 C2 L2
+VBB C9 C4 L6 L5
C12
C14 C15 C13
C6 +VCC L7 L8 C7 C8
L3 C3 C5
MGP449
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
List of components: C1 = 100 pF ceramic capacitor C2 = C3 = 100 nF polyester capacitor
+VCC TR1 C3 R3 R8 R9 R4 R5 0
MGP437
BLW33
+Vs D2 C4 R6
R1 D1 R2 C1 C2 R7
C4 = 10 F/25 V solid aluminium electrolytic capacitor R1 = 150 carbon resistor (0,25 W) R2 = 100 preset potentiometer (0,1 W) R3 = 82 carbon resistor (0,25 W) R4 = R5 = 2,2 k carbon resistor (0,25 W) R6 = 6 ; parallel connection of 2 x 12 carbon resistors (0,5 W each) R7 = R8 = 820 carbon resistor (0,25 W) R9 = 33 carbon resistor (0,25 W) D1 = BZY88-C3V3 D2 = BY206 TR1 = BD136
+VBB
Fig.10 Bias circuit for class-A amplifier at fvision = 860 MHz.
handbook, full pagewidth
-50
MGP450
30
dim (dB) dim -55
dcm (%)
20
-60
dcm
10
-65
0 0 1 2 3 Po sync (W) 4
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power. Typical values; VCE = 25 V; IC = 300 mA; fvision = 860 MHz; - - - Th = 25 C; Th = 70 C.
Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal -75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB. August 1986 9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
handbook, halfpage
5
MGP451
ri
handbook, halfpage
50
MGP452
ri, xi () 0 xi
RL
RL, XL ()
-5
25
XL -10
-15 10
102
f (MHz)
103
0 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 300 mA; Th = 70 C.
Typical values; VCE = 25 V; IC = 300 mA; Th = 70 C.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness The BLW33 is capable of withstanding a load mismatch (VSWR = 50 through all phases) under the following conditions: f = 860 MHz; VCE = 25 V; IC = 300 mA; Th = 70 C and PL = 2 W.
handbook, halfpage
35
MGP453
Gp (dB) 25
15
5 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 300 mA; Th = 70 C.
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW33
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
11
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW33
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
12

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